Press Releases September 3, 2026 04:05 PM

Navitas to Present at the Citi Global TMT Conference on September 8, 2026

Navitas Semiconductor to present at the Citi Global TMT Conference to highlight advancements in GaN and SiC power semiconductor technologies

By Caleb Monroe
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Navitas Semiconductor announced its participation in the Citi 2026 Global TMT Conference on September 8, 2026, where top executives will host a fireside chat and meet with investors to discuss its innovative GaNFast and GeneSiC power semiconductor products. The company emphasizes its leadership in GaN and SiC technologies that drive efficiency and performance in AI data centers, energy infrastructure, and industrial markets.

Navitas to Present at the Citi Global TMT Conference on September 8, 2026
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Key Points

  • Navitas will present at the Citi Global TMT Conference, offering investor engagement and insights into company strategy.
  • The company specializes in next-generation GaNFast and GeneSiC power semiconductors, impacting sectors like AI data centers, grid infrastructure, and industrial electrification.
  • Navitas holds over 300 patents and is the first semiconductor company to achieve CarbonNeutral® certification, underscoring its innovation and sustainability commitment.


TORRANCE, Calif., Sept. 03, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the Company will participate at the Citi 2026 Global TMT Conference to be held at the New York Hilton Midtown Hotel. Navitas’ President and CEO, Chris Allexandre, and Tonya Stevens, Chief Financial Officer, are scheduled to host a fireside chat at 1:15 p.m. Eastern Time on Tuesday, September 8, 2026, and will be available to meet with attending investors throughout the day.

A live and archived audio webcast of the Company’s fireside chat will be available in the Events section of Navitas’ Investor Relations website. Portfolio managers and analysts who would like to request a meeting with management should contact their Citi representative.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing and industrial electrification. With more than 30 years of combined expertise in wide-bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Investor Relations Contacts:
Shelton Group
Leanne Sievers | Brett Perry
[email protected]

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/35f4f970-5caf-4be9-842a-30ead6e11f60


Risks

  • Market adoption risk: The successful commercialization of GaN and SiC technologies depends on continued adoption in target sectors such as energy and data centers.
  • Competitive risk: The semiconductor industry is highly competitive with rapid technological developments that could challenge Navitas's market position.
  • Economic and supply chain risk: Global economic conditions and semiconductor supply chain disruptions could impact production and financial performance.

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