Navitas Semiconductor's shares surged 20% after the company introduced two new silicon carbide (SiC) MOSFET packages targeted at high-power density applications in AI data centers and energy infrastructure. The products are built on the company's 5th generation GeneSiC Trench-Assisted Planar SiC MOSFET technology platform and both carry 1200 V voltage ratings.
The new offerings include a top-side cooled QDPAK and a low-profile TO-247-4-LP. The QDPAK is designed to dissipate heat through the package top and occupies a 15 mm x 21 mm footprint with a height of 2.3 mm. That design supports applications up to 1000 VRMS and incorporates a 5 mm creepage distance.
The TO-247-4-LP variant delivers a reduced vertical profile for environments where height is constrained, specifically noting AI data center power supplies as a target application. This package also employs asymmetrical leads to improve manufacturing tolerances.
Navitas said the 5th generation GeneSiC platform delivers a 35% improvement in the RDS,ON × QGD figure of merit and roughly a 25% improvement in the QGD/QGS ratio compared with prior generations. The technology also uses a threshold voltage greater than 3 V to mitigate parasitic turn-on risk.
The initial product set comprises four devices, all rated at 1200 V, with on-resistance values spanning 6.5 mΩ to 12 mΩ. Each device will be offered in both the QDPAK and TO-247-4-LP packages.
Paul Wheeler, vice president and general manager of Navitas's SiC business unit, said the new package designs are a response to customer demand for increased power density in limited space. The company positioned the QDPAK toward applications benefiting from top-side cooling and the low-profile TO-247-4-LP toward use cases where vertical space is constrained.
The product specifications and packaging choices emphasize thermal management, high-voltage capability and manufacturability for high-power applications in data center and energy infrastructure segments. Market reaction to the announcement was immediate, with NVTS shares rising 20% on the news.
Additional context and considerations
- The technology improvements cited focus on RDS,ON × QGD and QGD/QGS ratios, as well as an elevated threshold voltage to prevent parasitic turn-on.
- The QDPAK's top-side cooling and the TO-247-4-LP's reduced vertical footprint are positioned to address thermal and height constraints, respectively.
- The initial four products cover on-resistance values from 6.5 mΩ to 12 mΩ, all at 1200 V, and are available in both announced packages.